NSN 5961-00-009-5518
Part Details | TRANSISTOR
5961-00-009-5518 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 386MR031P002, 386MR031P002, 386MR031P002, 5961-00-009-5518, 00-009-5518, 5961000095518, 000095518
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 04, 1972 | 00-009-5518 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-009-5518
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 386MR031P002 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 386MR031P002 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 386MR031P002 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-009-5518
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM110.0 MAXIMUM AND CA+110.0 MAXIMUM AND CBA110.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |