NSN 5961-00-025-5899
Part Details | TRANSISTOR
5961-00-025-5899 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: L00885, JAN2N1613, JAN2N1613, 5961-00-025-5899, 00-025-5899, 5961000255899, 000255899
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 21, 1972 | 00-025-5899 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-025-5899
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| L00885 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| JAN2N1613 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| JAN2N1613 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-025-5899
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB75.0 MAXIMUM AND CAC30.0 MAXIMUM AND CBM7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC500.00 MILLIAMPERES NOMINAL AND BACAE1.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB800.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L00885; JUNCTION PATTERN ARRANGEMENT: NPN |
| CRITICALITY CODE JUSTIFICATION | FEAT |