NSN 5961-00-053-8804

Part Details | TRANSISTOR

5961-00-053-8804 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 1076913, 1076-913, 2N335, 2N335, 3520072000, 352-0072-000, 460014, 2N335, 5961-00-053-8804, 00-053-8804, 5961000538804, 000538804

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 25, 196700-053-880420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-053-8804
Part Number Cage Code Manufacturer
1076-91372314BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
2N33503508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N33596214RAYTHEON COMPANYDBA RAYTHEON
352-0072-00013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
46001489305SIMMONDS PRECISION PRODUCTS INC
2N33501295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-053-8804
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 1.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC25.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB150.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES NOMINAL
OVERALL DIAMETER0.359 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE