NSN 5961-00-057-1389
Part Details | TRANSISTOR
5961-00-057-1389 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2564, 2N2564, 32N2564, 2N2564, 10131681, 5961-00-057-1389, 00-057-1389, 5961000571389, 000571389
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-057-1389 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-057-1389
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2564 | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
| 2N2564 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 32N2564 | 30043 | SOLID STATE DEVICES, INC. |
| 2N2564 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 10131681 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-057-1389
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CALM40.0 MAXIMUM AND CBAM20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AACABM1.00 AMPERES NOMINAL AND AACACM3.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF20.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN95.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| OVERALL DIAMETER | 0.340 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |