NSN 5961-00-058-1655
Part Details | TRANSISTOR
5961-00-058-1655 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 910522, 2N1196, RELEASE3403, 2N1196, 2N1196, 2N1196, 5961-00-058-1655, 00-058-1655, 5961000581655, 000581655
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-058-1655 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-058-1655
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 910522 | 80249 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 2N1196 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3403 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1196 | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| 2N1196 | 2D085 | NEW JERSEY SEMI-CONDUCTOR PRODUCTSINC |
| 2N1196 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-058-1655
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM70.0 MAXIMUM AND CA+70.0 MAXIMUM AND CBA4.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG350.00 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |