NSN 5961-00-081-6101
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-081-6101 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: QB88600450, QB88600-450, 1N939, QB88600450, QB88600-450, 1N939, 99055411, 5961-00-081-6101, 00-081-6101, 5961000816101, 000816101
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1961 | 00-081-6101 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-081-6101
Part Number | Cage Code | Manufacturer |
---|---|---|
QB88600-450 | 06840 | BENDIX CORP THE |
1N939 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
QB88600-450 | 55974 | HONEYWELL INTL INCDEFENSE AVIONICS SYSTEMS |
1N939 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
99055411 | F6481 | THALES SA |
Technical Data | NSN 5961-00-081-6101
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
CURRENT RATING PER CHARACTERISTIC | AS7.50 MILLIAMPERES NOMINAL |
POWER RATING PER CHARACTERISTIC | AG500.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | GLASS |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
NONDEFINITIVE SPEC/STD DATA | 1N939 TYPE |