NSN 5961-00-082-3849

Part Details | TRANSISTOR

5961-00-082-3849 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1499B, DMS 77025B, 2N1499B, RELEASE4133, 2N1499B, 2N1499B, 2N1499B, 5961-00-082-3849, 00-082-3849, 5961000823849, 000823849

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-082-384920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-082-3849
Part Number Cage Code Manufacturer
2N1499B11058CSR INDUSTRIES INC
DMS 77025B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
2N1499B80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE413380131ELECTRONIC INDUSTRIES ASSOCIATION
2N1499B12045ELECTRONIC TRANSISTORS CORP
2N1499B04713FREESCALE SEMICONDUCTOR, INC.
2N1499B13606SPRAGUE ELECTRIC COSOLID TANTALUM DIV
Technical Data | NSN 5961-00-082-3849
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB75.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.234 INCHES NOMINAL
OVERALL DIAMETER0.330 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE4133 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION