NSN 5961-00-082-4073
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-082-4073 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N4249A, 3159268, TS10, J10, 5961000824073, EC100, 1N4249, Q68000A3379Z, Q68000-A3379-Z, Q68000A3379Z, Q68000-A3379-Z, 5A1, 5961PL1332328, 1N4249, 1N4249, 1N249, MILS19500286, MILS19500-286, JAN1N4249, 4178600443, 4178600-443, 6179761, 617976-1, 8481010001, 848101-0001, 5961-00-082-4073, 00-082-4073, 5961000824073, 000824073
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1961 | 00-082-4073 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-082-4073
Part Number | Cage Code | Manufacturer |
---|---|---|
JAN1N4249A | C7191 | ADELCO ELEKTRONIK GMBH |
3159268 | 23427 | CETEC CORP BENMAR DIV |
TS10 | 12060 | DIODES INC |
J10 | 12060 | DIODES INC |
5961000824073 | SCY13 | E.C.A ETABLISSEMENTCENTRALD'APPROVISIONNEMENT DES |
EC100 | 83701 | ELECTRONIC DEVICES INCDBA E D I |
1N4249 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
Q68000-A3379-Z | C4751 | EPCOS AG |
Q68000-A3379-Z | D1180 | EPCOS AG ABT. PR ROE K PM |
5A1 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
5961PL1332328 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
1N4249 | 14552 | MICROSEMI CORPORATION |
1N4249 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
1N249 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MILS19500-286 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN1N4249 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
4178600-443 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
617976-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
848101-0001 | 65597 | THALES DEFENSE & SECURITY, INC. |
Technical Data | NSN 5961-00-082-4073
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
CURRENT RATING PER CHARACTERISTIC | DM333.00 MILLIAMPERES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.080 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |