NSN 5961-00-086-8329
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-086-8329 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 7792399, 1N456, 1N456, 5961-00-086-8329, 00-086-8329, 5961000868329, 000868329
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-086-8329 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-086-8329
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 7792399 | 19204 | ARMY, UNITED STATES DEPARTMENT OFTHE |
| 1N456 | 04655 | GENERAL DYNAMICS MISSION SYSTEMS,INC. |
| 1N456 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
Technical Data | NSN 5961-00-086-8329
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF40.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF0.2 WATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.105 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
