NSN 5961-00-086-9023
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-086-9023 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: D10316A, 6150117, 615011-7, 5961-00-086-9023, 00-086-9023, 5961000869023, 000869023
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-086-9023 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-086-9023
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| D10316A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 615011-7 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-086-9023
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET20.4 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB7.90 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG800.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.062 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.375 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 37695-615011 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |