NSN 5961-00-087-4939
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-087-4939 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C35G, 2N684, 5961-00-087-4939, 00-087-4939, 5961000874939, 000874939
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1963 | 00-087-4939 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-087-4939
Part Number | Cage Code | Manufacturer |
---|---|---|
C35G | 24446 | GENERAL ELECTRIC COMPANY |
2N684 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-00-087-4939
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 5.0 MAXIMUM PEAK GATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | CG16.00 AMPERES MAXIMUM AND FG150.00 AMPERES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.250 INCHES |
TERMINAL TYPE AND QUANTITY | D1$B2 |
OVERALL LENGTH | 1.646 INCHES MAXIMUM |
OVERALL WIDTH ACROSS FLATS | 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT IS PNPN |