NSN 5961-00-101-2216

Part Details | TRANSISTOR

5961-00-101-2216 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 61500, 29034742, 2903474-2, 2N5918, TA7367, 29034742, 2903474-2, 6187942, 618794-2, PT6694, 5961-00-101-2216, 00-101-2216, 5961001012216, 001012216

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 15, 197200-101-221620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-101-2216
Part Number Cage Code Manufacturer
6150034371INTERSIL CORPORATIONDIV NA
2903474-234371INTERSIL CORPORATIONDIV NA
2N591834371INTERSIL CORPORATIONDIV NA
TA736734371INTERSIL CORPORATIONDIV NA
2903474-210001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
618794-237695RAYTHEON COMPANYDBA RAYTHEON
PT669401281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-00-101-2216
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICAC750.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB10.0 WATTS MAXIMUM
INCLOSURE MATERIAL GLASS AND METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.510 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH0.205 INCHES MAXIMUM
OVERALL DIAMETER0.320 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN