NSN 5961-00-101-2299
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-101-2299 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 28925801, 2892580-1, DZ721110A, MILPRF19500127, MIL-PRF-19500/127, JANTX1N754C1, JANTX1N754C-1, 28925801, 2892580-1, 5961-00-101-2299, 00-101-2299, 5961001012299, 001012299
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 15, 1972 | 00-101-2299 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-101-2299
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2892580-1 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| DZ721110A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MIL-PRF-19500/127 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N754C-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2892580-1 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
Technical Data | NSN 5961-00-101-2299
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET6.7 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M2.0/P2.0 |
| CURRENT RATING PER CHARACTERISTIC | AS20.00 MILLIAMPERES NOMINAL AND BACEA60.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |