NSN 5961-00-104-5867

Part Details | TRANSISTOR

5961-00-104-5867 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4977A, RELEASE5455, 2N4977, 619120901, 619120-901, 2N4977, 2N4977, 2N4977, 5961-00-104-5867, 00-104-5867, 5961001045867, 001045867

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 26, 196800-104-586720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-104-5867
Part Number Cage Code Manufacturer
2N4977AC7191ADELCO ELEKTRONIK GMBH
RELEASE545580131ELECTRONIC INDUSTRIES ASSOCIATION
2N497780131ELECTRONIC INDUSTRIES ASSOCIATION
619120-90137695RAYTHEON COMPANYDBA RAYTHEON
2N497721845SOLITRON DEVICES, INC.
2N497715818TELCOM SEMICONDUCTOR INC
2N497716170TELEDYNE TECHNOLOGIES INCORPORATEDDBA TELEDYNE MICROELECTRONIC
Technical Data | NSN 5961-00-104-5867
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG1.8 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE