NSN 5961-00-104-8441
Part Details | TRANSISTOR
5961-00-104-8441 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4234A, 2N4234, 150480900, 1504809-00, 150480900, 15-04809-00, 2N4234, RELEASE5444, 2N4234883B, 2N4234/883B, 2N4234, 2N4234, 7349059001, 734-905-9001, 2N4234, EAW022, 2N4234, 2N4234, 10133037, 2N4234, 2N4234, 615513903, 615513-903, 5961-00-104-8441, 00-104-8441, 5961001048441, 001048441
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 01, 1968 | 00-104-8441 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-104-8441
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4234A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N4234 | C7191 | ADELCO ELEKTRONIK GMBH |
| 1504809-00 | 15476 | COMPAQ FEDERAL LLC |
| 15-04809-00 | 15476 | COMPAQ FEDERAL LLC |
| 2N4234 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5444 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4234/883B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N4234 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N4234 | 86360 | GE AVIATION SYSTEMS LLCDBA GE AVIATION DIV INFORMATION |
| 734-905-9001 | 07217 | HONEYWELL LIMITEDDBA SYSTEMS SENSOR CANADA |
| 2N4234 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| EAW022 | K0967 | MBDA UK LIMITEDDBA MBDA UK LTD |
| 2N4234 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 2N4234 | K5519 | MOTOROLA UK SALES LTD MOTOROLASEMICONDUCTORS GROUP |
| 10133037 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 2N4234 | 92755 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDBA LAND & SELF PROTECTION SYSTEM |
| 2N4234 | 07413 | PROTOSPEC |
| 615513-903 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-104-8441
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM AND AB200.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
