NSN 5961-00-105-7412
Part Details | TRANSISTOR
5961-00-105-7412 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 11253555, DMS 85052B, D5K1, C3885, 7230001, 723000-1, 3520834010, 352-0834-010, D5K1, 5961-00-105-7412, 00-105-7412, 5961001057412, 001057412
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 12, 1968 | 00-105-7412 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-105-7412
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 11253555 | 17773 | BALLISTIC MISSILE DEFENSE SYSTEMSCOMMAND |
| DMS 85052B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| D5K1 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C3885 | 98869 | HOWELL INSTRUMENTS, INC. |
| 723000-1 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 352-0834-010 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| D5K1 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-00-105-7412
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | UNIJUNCTION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM INTERBASE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | A+2.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF300.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.188 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NP |
