NSN 5961-00-105-7496
Part Details | TRANSISTOR
5961-00-105-7496 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3686, RELEASE5012, 18550041, 1855-0041, 904728, 9-04728, JAN2N3686, 2639196, 2N3686, 5961-00-105-7496, 00-105-7496, 5961001057496, 001057496
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 03, 1968 | 00-105-7496 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-105-7496
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3686 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5012 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1855-0041 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 9-04728 | 0NKU0 | LCT ELECTRONICS |
| JAN2N3686 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2639196 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 2N3686 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-105-7496
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AD1.20 MILLIAMPERES MAXIMUM AND AK50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG60.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
