NSN 5961-00-105-8135
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-105-8135 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N416G, 1N416GR, 1N416G, 3484392, 348439-2, 3484392, 348439-2, 3484392, 348439-2, 3484391, 348439-1, 3484391, 348439-1, 3484391, 348439-1, 5961-00-105-8135, 00-105-8135, 5961001058135, 001058135
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 12, 1968 | 00-105-8135 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-105-8135
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N416G | 4U751 | ADVANCED SEMICONDUCTOR,INC.DBA A S I |
| 1N416GR | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 1N416G | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 348439-2 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 348439-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 348439-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 348439-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 348439-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 348439-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-105-8135
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| POWER RATING PER CHARACTERISTIC | AF500.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.185 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.409 INCHES NOMINAL |
| OVERALL DIAMETER | 0.240 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | REMOVABLE BASE ADAPTOR PERMITTING EITHER FORWARD OR REVERSE POLARITY |
