NSN 5961-00-105-8867

Part Details | TRANSISTOR

5961-00-105-8867 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: F1151, SFE793, 18550020, 1855-0020, 5961PL1336072, ITS3134, 18550020, 1855-0020, SF51145, SFE793, FN1962, F1151, SFB9637, F1151, 5961-00-105-8867, 00-105-8867, 5961001058867, 001058867

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 15, 196800-105-886720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-105-8867
Part Number Cage Code Manufacturer
F115183740EVEREADY BATTERY CO INC
SFE79304713FREESCALE SEMICONDUCTOR, INC.
1855-002028480HEWLETT-PACKARD COMPANYDBA HP
5961PL13360729009HINSPEKTORAT WSPARCIA SIL ZBROJNYCH
ITS313432293INTERSIL INCSUB OF GENERAL ELECTRIC CO
1855-00201LQK8KEYSIGHT TECHNOLOGIES, INC.
SF5114527014NATIONAL SEMICONDUCTOR CORPORATION
SFE7935V1P1ON SEMICONDUCTOR CORPORATION
FN196217856SILICONIX INCORPORATEDDIV SILICONIX
F115121845SOLITRON DEVICES, INC.
SFB963701295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
F115105397UNION CARBIDE CORP MATERIALS SYSTEMSDIV
Technical Data | NSN 5961-00-105-8867
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC10.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICBW500.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG500.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.170 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.220 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE