NSN 5961-00-106-1613
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-106-1613 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: HD2135A, 1N198A, 1N933, RELEASE3744, 1N191, 1N933, 1N933, 1N933, 1N933, 672001N198, 67200-1N198, MILS19500119, MILS19500-119, JAN1N933, JAN1N191, 4252629, 425-2629, 1N191, G2652831, G265283-1, 3221071P1, 322-1071P1, 3221028P3, 322-1028P3, 3221028P1, 322-1028P1, 1N933, 1N933, 5961-00-106-1613, 00-106-1613, 5961001061613, 001061613
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | FEB 14, 1973 | 00-106-1613 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-106-1613
Part Number | Cage Code | Manufacturer |
---|---|---|
HD2135A | 8V613 | BOEING COMPANY, THEDBA BOEING |
1N198A | 14632 | DRS SIGNAL SOLUTIONS, INC. |
1N933 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE3744 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N191 | 96916 | FLEET READINESS CENTER EASTDIV DEPARTMENT OF NAVY |
1N933 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
1N933 | 16068 | INTERNATIONAL DIODE CORP |
1N933 | 14433 | ITT SEMICONDUCTORS DIV |
1N933 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
67200-1N198 | 80070 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
MILS19500-119 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN1N933 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN1N191 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
425-2629 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
1N191 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
G265283-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
322-1071P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
322-1028P3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
322-1028P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
1N933 | 31338 | SEMITRONICS CORP |
1N933 | 30043 | SOLID STATE DEVICES, INC. |
Technical Data | NSN 5961-00-106-1613
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | GERMANIUM |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | AF1.00 AMPERES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 75.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIFICATION/STANDARD DATA | 80131-RELESE3744 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |