NSN 5961-00-107-2735

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-107-2735 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 503140, 5031-40, S201Z, 201Z, 5961-00-107-2735, 00-107-2735, 5961001072735, 001072735

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 02, 196800-107-273533096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-107-2735
Part Number Cage Code Manufacturer
5031-4005869RAYTHEON COMPANYDBA RAYTHEON
S201Z30043SOLID STATE DEVICES, INC.
201Z05277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
Technical Data | NSN 5961-00-107-2735
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM REVERSE VOLTAGE, PEAK
CURRENT RATING PER CHARACTERISTICCY15.00 AMPERES MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.281 INCHES NOMINAL
OVERALL DIAMETER0.375 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESINTERNAL JUNCTION CONFIGURATION, PNPN