NSN 5961-00-109-2074
Part Details | TRANSISTOR
5961-00-109-2074 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40317, 3800050000, 380-0050-000, 40317, 40317, 5961-00-109-2074, 00-109-2074, 5961001092074, 001092074
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | AUG 02, 1968 | 00-109-2074 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-109-2074
Part Number | Cage Code | Manufacturer |
---|---|---|
40317 | 1S926 | AMERICAN MICROSEMICONDUCTOR INC |
380-0050-000 | 88113 | HBC SOLUTIONS, INC.DBA HARRIS BROADCAST |
40317 | 34371 | INTERSIL CORPORATIONDIV NA |
40317 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
Technical Data | NSN 5961-00-109-2074
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB200.00 MILLIAMPERES MAXIMUM AND AC700.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB1.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |