NSN 5961-00-110-9356
Part Details | TRANSISTOR
5961-00-110-9356 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 00010068.333, 0001-0068.333, RELEASE5345, 2N4391, 1852058P18608, 185-2058P1-8608, 1852058P1426, 185-2058P1-426, 19A134093P1, 18550420, 1855-0420, 19924021, 1992402-1, 657991, 804889, 2N4391, 046759, 657991, 3520898010, 352-0898-010, FN815, 2N4391, 2N4391, 5961-00-110-9356, 00-110-9356, 5961001109356, 001109356
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 12, 1968 | 00-110-9356 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-110-9356
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 0001-0068.333 | D4598 | ACTERNA DEUTSCHLAND GMBH |
| RELEASE5345 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4391 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 185-2058P1-8608 | 08771 | GENERAL ELECTRIC COMOBILE COMMUNICATIONS BUSINESS DIV |
| 185-2058P1-426 | 08771 | GENERAL ELECTRIC COMOBILE COMMUNICATIONS BUSINESS DIV |
| 19A134093P1 | 08771 | GENERAL ELECTRIC COMOBILE COMMUNICATIONS BUSINESS DIV |
| 1855-0420 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1992402-1 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 657991 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 804889 | 07342 | NAI TECHNOLOGIES INC |
| 2N4391 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 046759 | 22915 | NORTHROP GRUMMAN CORPELECTRONIC SYSTEMS DEFENSIVE SYSTEM |
| 657991 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 352-0898-010 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| FN815 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N4391 | 15818 | TELCOM SEMICONDUCTOR INC |
| 2N4391 | 14832 | UNION CARBIDE CORP BATTERYPRODUCTS DIV |
Technical Data | NSN 5961-00-110-9356
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AK50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.8 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
