NSN 5961-00-113-7579
Part Details | TRANSISTOR
5961-00-113-7579 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4341, RELEASE5346, 2N4341, 99181417T, 5961-00-113-7579, 00-113-7579, 5961001137579, 001137579
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 04, 1968 | 00-113-7579 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-113-7579
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4341 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5346 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4341 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 99181417T | F0057 | THALES COMMUNICATIONS & SECURITYS.A.S |
Technical Data | NSN 5961-00-113-7579
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AK50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG300.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
