NSN 5961-00-114-5228
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-114-5228 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C50N, C50N, 5961-00-114-5228, 00-114-5228, 5961001145228, 001145228
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 20, 1968 | 00-114-5228 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-114-5228
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C50N | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C50N | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-00-114-5228
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AD110.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF500.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.500 INCHES |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 2.500 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
