NSN 5961-00-115-8011

Part Details | TRANSISTOR

5961-00-115-8011 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: GM1019B, GM1019A, 20329810702, 2032981-0702, 20329810701, 2032981-0701, GM1019A, 5961-00-115-8011, 00-115-8011, 5961001158011, 001158011

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 27, 196800-115-801120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-115-8011
Part Number Cage Code Manufacturer
GM1019B53399GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS
GM1019A53399GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS
2032981-070206845RAYTHEON COMPANYDBA RAYTHEON
2032981-070106845RAYTHEON COMPANYDBA RAYTHEON
GM1019A01295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-115-8011
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -0.3 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICACM20.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF75.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP