NSN 5961-00-115-8450

Part Details | TRANSISTOR

5961-00-115-8450 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3N140A, 3N140, A7384, A3209, DMS 85043B, 3N140, RELEASE5615, 15406731, 15-40673-1, 266411, 3N140, 3N140, 5L551240107, 5L5512-401-07, 107011700, 107-0117-00, 3N140, 3N140, 27433630399, 2743-3630399, 2682577, 3N141, 3520867010, 352-0867-010, 3520867010, 352-0867-010, 0487560001, 048756-0001, 97197, 5961-00-115-8450, 00-115-8450, 5961001158450, 001158450

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 20, 196800-115-845020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-115-8450
Part Number Cage Code Manufacturer
3N140AC7191ADELCO ELEKTRONIK GMBH
3N140C7191ADELCO ELEKTRONIK GMBH
A738481535AERONAUTICAL COMMUNICATIONSEQUIPMENT INC
A320981535AERONAUTICAL COMMUNICATIONSEQUIPMENT INC
DMS 85043B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
3N14080131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE561580131ELECTRONIC INDUSTRIES ASSOCIATION
15-40673-152727EMERGENCY BEACON CORP
26641189536FLUKE CORPORATION
3N14004713FREESCALE SEMICONDUCTOR, INC.
3N14014936GENERAL SEMICONDUCTOR INC
5L5512-401-07D1901HENSOLDT SENSORS GMBHDIV SEPS
107-0117-0022373HONEYWELL INTERNATIONAL INC.DBA HONEYWELL
3N1401MY79INTERSIL COMMUNICATIONS INC.
3N14034371INTERSIL CORPORATIONDIV NA
2743-363039957953MOSELEY ASSOCIATES, INC.DBA MOSELEY
268257753711NAVAL SEA SYSTEMS COMMAND
3N14154590RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS
352-0867-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-0867-01095105ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS
048756-000165597THALES DEFENSE & SECURITY, INC.
97197F6170THALES OPTRONIQUE SAS
Technical Data | NSN 5961-00-115-8450
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG400.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5615 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION