NSN 5961-00-116-2695
Part Details | TRANSISTOR
5961-00-116-2695 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RELEASE4739, 2N3382, 18550390, 1855-0390, 2N3382, SU707, 5961-00-116-2695, 00-116-2695, 5961001162695, 001162695
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 25, 1968 | 00-116-2695 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-116-2695
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RELEASE4739 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3382 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1855-0390 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 2N3382 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SU707 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-00-116-2695
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AD100.00 MILLIAMPERES MAXIMUM AND AK50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG300.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
