NSN 5961-00-118-1212

Part Details | TRANSISTOR

5961-00-118-1212 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4029, RELEASE5174A, 2N4029, 2N4029, 10130053, 0837150, AK0837150, 2N4029, 5961-00-118-1212, 00-118-1212, 5961001181212, 001181212

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 14, 196800-118-121220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-118-1212
Part Number Cage Code Manufacturer
2N402980131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE5174A80131ELECTRONIC INDUSTRIES ASSOCIATION
2N402907263FAIRCHILD SEMICONDUCTOR CORP
2N402903877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
10130053A486GNIMIKKEISTOKESKUS NCB FINLAND
0837150D0894ROHDE & SCHWARZ GMBH & CO. KG
AK0837150D0894ROHDE & SCHWARZ GMBH & CO. KG
2N402930043SOLID STATE DEVICES, INC.
Technical Data | NSN 5961-00-118-1212
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC1.00 AMPERES MAXIMUM AND BF0.05 MICROAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB500.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP