NSN 5961-00-121-5405
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-121-5405 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1317A, 0N002567, 1N1317A, 0N002567, 0N002567, 5961-00-121-5405, 00-121-5405, 5961001215405, 001215405
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 30, 1968 | 00-121-5405 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-121-5405
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1317A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 0N002567 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N1317A | 99942 | N A P SMD TECHNOLOGY INC |
| 0N002567 | 99942 | N A P SMD TECHNOLOGY INC |
| 0N002567 | 98230 | NATIONAL SECURITY AGENCY |
Technical Data | NSN 5961-00-121-5405
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM SOURCE SUPPLY VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AS200.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS AND METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.062 INCHES NOMINAL |
| TERMINAL CIRCLE DIAMETER | 0.050 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
