NSN 5961-00-123-5834

Part Details | TRANSISTOR

5961-00-123-5834 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 18540488, 1854-0488, 7934931, DTS430, 18540488, 1854-0488, STI430, STI-430, DIS430, DIS430, 475685, 5961-00-123-5834, 00-123-5834, 5961001235834, 001235834

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 08, 196800-123-583420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-123-5834
Part Number Cage Code Manufacturer
1854-04881MY97AGILENT TECHNOLOGIES, INC.DIV AGILENT TECHNOLOGIES
793493199974DELCO ELECTRONICS CORPDELCO SYSTEMS OPNS
DTS43016758GENERAL MOTORS CORPDELCO ELECTRONICS DIV
1854-048828480HEWLETT-PACKARD COMPANYDBA HP
STI-43050891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
DIS43031338SEMITRONICS CORP
DIS43007256SILICON TRANSISTOR CORPSUB OF BBF INC
47568514028SYPRIS ELECTRONICS, LLC
Technical Data | NSN 5961-00-123-5834
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICAC5.00 AMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH0.450 INCHES MAXIMUM
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE