NSN 5961-00-127-1585
Part Details | TRANSISTOR
5961-00-127-1585 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5192, 2N5192A, 102087001, 102087-001, RELEASE5751, 2N5192, 2N5192, 48105192, 48-105-192, 2N5192, 120440009, 12044-0009, S12001149, S12001-149, 2N5192, A88009786, A-88-0097-86, 2N5190, JAN2N5192, 2N5192, 2N5192, 0488050001, 048805-0001, 2N5192, SMB6926915, SMB692691-5, 5961-00-127-1585, 00-127-1585, 5961001271585, 001271585
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | NOV 22, 1968 | 00-127-1585 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-127-1585
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5192 | C7191 | ADELCO ELEKTRONIK GMBH |
2N5192A | C7191 | ADELCO ELEKTRONIK GMBH |
102087-001 | 54933 | AERO SYSTEMS ENGINEERING, INC.DBA ASE |
RELEASE5751 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5192 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5192 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
48-105-192 | 1G4A7 | GEOMETRICS, INC. |
2N5192 | 1G4A7 | GEOMETRICS, INC. |
12044-0009 | 27914 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
S12001-149 | 25583 | L3 AVIATION PRODUCTS, INC. |
2N5192 | 25583 | L3 AVIATION PRODUCTS, INC. |
A-88-0097-86 | K0668 | LEONARDO MW LTD |
2N5190 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN2N5192 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
2N5192 | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
2N5192 | 57962 | STMICROELECTRONICS INC |
048805-0001 | 65597 | THALES DEFENSE & SECURITY, INC. |
2N5192 | 34428 | UNITED PAGE INC |
SMB692691-5 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-127-1585
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | AC4.00 AMPERES MAXIMUM AND AB1.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB40.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | PLASTIC |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 1 |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.450 INCHES MAXIMUM |
OVERALL HEIGHT | 0.130 INCHES MAXIMUM |
OVERALL WIDTH | 0.330 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |