NSN 5961-00-128-2836
Part Details | TRANSISTOR
5961-00-128-2836 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80069B, 6196111, 619611-1, PT3645, 5961-00-128-2836, 00-128-2836, 5961001282836, 001282836
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 12, 1973 | 00-128-2836 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-128-2836
Part Number | Cage Code | Manufacturer |
---|---|---|
DMS 80069B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
619611-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
PT3645 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-128-2836
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 17.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC2.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB25.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNC |
NOMINAL THREAD SIZE | 0.164 INCHES |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 THREADED STUD |
OVERALL LENGTH | 0.380 INCHES MAXIMUM |
OVERALL DIAMETER | 0.375 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |