NSN 5961-00-128-6250

Part Details | TRANSISTOR

5961-00-128-6250 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: GT816BV1, NTE94, ECG94, ECG94, SDT411, DTS411, 700429, 5961-00-128-6250, 00-128-6250, 5961001286250, 001286250

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 29, 196800-128-625020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-128-6250
Part Number Cage Code Manufacturer
GT816BV126512NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV MISSION SYSTEMS
NTE947T184NTE ELECTRONICS INCSUB OF SOLID STATE INC
ECG948A233PHILIPS ECG INCDIV OF NORTH AMERICAN PHILIPS CORP
ECG9461636PHILIPS ECG INCDIV OF NORTH AMERICAN PHILIPS CORP
SDT41121845SOLITRON DEVICES, INC.
DTS41121845SOLITRON DEVICES, INC.
70042952542SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV
Technical Data | NSN 5961-00-128-6250
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB2.00 AMPERES MAXIMUM AND AC3.50 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB100.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.375 INCHES NOMINAL
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN