NSN 5961-00-133-0419
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-133-0419 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: W41292F6200F5, UTX205, 7206046, 720604-6, 6186692, 618669-2, 5961-00-133-0419, 00-133-0419, 5961001330419, 001330419
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 18, 1968 | 00-133-0419 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-133-0419
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| W41292F6200F5 | C0426 | HENSOLDT SENSORS GMBH |
| UTX205 | 12969 | MICRO USPD INC |
| 720604-6 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 618669-2 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-133-0419
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | EB2.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.062 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 37695-618669 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
