NSN 5961-00-134-9938
Part Details | TRANSISTOR
5961-00-134-9938 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SPC8388, A10028, 2N3771X, 2N3771, SPD80061, 80061, 36399, 2N3771, STC9270, PP3641, STC9270, SPC8388, 2N3771, SPD80061, SPD80061, 80061, 113876000, 113876-000, 507C945H39, 5961-00-134-9938, 00-134-9938, 5961001349938, 001349938
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 12, 1968 | 00-134-9938 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-134-9938
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SPC8388 | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| A10028 | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N3771X | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| 2N3771 | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
| SPD80061 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| 80061 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| 36399 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 2N3771 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| STC9270 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| PP3641 | 33178 | MICROSEMI PPC INC |
| STC9270 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| SPC8388 | 30045 | SOLID POWER CORP |
| 2N3771 | 30045 | SOLID POWER CORP |
| SPD80061 | 30043 | SOLID STATE DEVICES, INC. |
| SPD80061 | 07148 | UNITED TECHNOLOGIES CORP HAMILTONSUNDSTRAND CORP |
| 80061 | 07148 | UNITED TECHNOLOGIES CORP HAMILTONSUNDSTRAND CORP |
| 113876-000 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
| 507C945H39 | 11660 | WESTINGHOUSE ELECTRIC CORPCONTROL BUSINESS UNIT |
Technical Data | NSN 5961-00-134-9938
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | BF2.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.425 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.800 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
