NSN 5961-00-136-1673
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-136-1673 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: CT32012LB0037, ST32012LB0037, ST32012LB0037, ST32012LB0037, 5961-00-136-1673, 00-136-1673, 5961001361673, 001361673
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 20, 1969 | 00-136-1673 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-136-1673
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CT32012LB0037 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| ST32012LB0037 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| ST32012LB0037 | 22915 | NORTHROP GRUMMAN CORPELECTRONIC SYSTEMS DEFENSIVE SYSTEM |
| ST32012LB0037 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-136-1673
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AG1.40 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.185 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
