NSN 5961-00-137-0613

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-137-0613 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4188A, 2N4188, RELEASE5221, 2N4188, 5961-00-137-0613, 00-137-0613, 5961001370613, 001370613

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 24, 197100-137-061333096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-137-0613
Part Number Cage Code Manufacturer
2N4188AC7191ADELCO ELEKTRONIK GMBH
2N418880131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE522180131ELECTRONIC INDUSTRIES ASSOCIATION
2N418804713FREESCALE SEMICONDUCTOR, INC.
Technical Data | NSN 5961-00-137-0613
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 450.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
CURRENT RATING PER CHARACTERISTICCG5.00 AMPERES MAXIMUM AND CF100.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAE5.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH1.505 INCHES NOMINAL
OVERALL DIAMETER0.420 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA80131-RELESE5221 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION