NSN 5961-00-139-2397

Part Details | TRANSISTOR

5961-00-139-2397 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: A210, A2586, 2N5109A, X2N5109, A2586, A210, A210, 3520766010, 352-0766-010, A40008501, A40-0085-01, 5961-00-139-2397, 00-139-2397, 5961001392397, 001392397

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 25, 197100-139-239720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-139-2397
Part Number Cage Code Manufacturer
A21073445AMPEREX ELECTRONIC CORP
A258673445AMPEREX ELECTRONIC CORP
2N5109A04713FREESCALE SEMICONDUCTOR, INC.
X2N510904713FREESCALE SEMICONDUCTOR, INC.
A258625403PHILIPS CIRCUIT ASSEMBLIES
A21025403PHILIPS CIRCUIT ASSEMBLIES
A21018324PHILIPS SEMICONDUCTORS INC
352-0766-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
A40-0085-0104423TELONIC BERKELEY, INC.
Technical Data | NSN 5961-00-139-2397
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC150.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB3.5 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN