NSN 5961-00-152-8200
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-152-8200 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 103G3329, 50820180, 5082-0180, MA4756, 50820180, 5082-0180, MA4756, 01432793, 5961-00-152-8200, 00-152-8200, 5961001528200, 001528200
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 06, 1971 | 00-152-8200 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-152-8200
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 103G3329 | 20284 | AIMTRON SYSTEMS LLCDBA TARGET |
| 5082-0180 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| MA4756 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 5082-0180 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| MA4756 | DG438 | SEMIC RF ELECTRONIC GMBH |
| 01432793 | F0052 | THALES SYSTEMES AEROPORTES SAS |
Technical Data | NSN 5961-00-152-8200
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.0 MAXIMUM FORWARD VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CJ1.00 MICROAMPERES MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
