NSN 5961-00-153-3751
Part Details | TRANSISTOR
5961-00-153-3751 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4416A, 2137040G001, 18550276, 1855-0276, 2N4416A, 505199, 505-199, AM0108591, 2N4416A, 5961-00-153-3751, 00-153-3751, 5961001533751, 001533751
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 21, 1973 | 00-153-3751 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-153-3751
Part Number | Cage Code | Manufacturer |
---|---|---|
2N4416A | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
2137040G001 | 28527 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED |
1855-0276 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
2N4416A | 12040 | NATIONAL SEMICONDUCTOR CORP |
505-199 | D8008 | PLATH GMBH |
AM0108591 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
2N4416A | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-153-3751
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | FIELD EFFECT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | AK10.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF300.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-72 |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.210 INCHES MAXIMUM |
OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |