NSN 5961-00-153-4484
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-153-4484 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 103G332821, 103G3328-2-1, 402049, 402049, MA4882, MA4046B, 103G332821, 103G3328-2-1, 40373800701, 4037380-0701, 103G332821, 103G3328-2-1, 5961-00-153-4484, 00-153-4484, 5961001534484, 001534484
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 08, 1971 | 00-153-4484 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-153-4484
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 103G3328-2-1 | 20284 | AIMTRON SYSTEMS LLCDBA TARGET |
| 402049 | 20284 | AIMTRON SYSTEMS LLCDBA TARGET |
| 402049 | 12909 | CARDION INC |
| MA4882 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| MA4046B | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 103G3328-2-1 | 98738 | HERLEY CHICAGODBA STEWART WARNER ELECTRONICS |
| 4037380-0701 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| 103G3328-2-1 | 67177 | ZENITH ELECTRONICS CORPORATION |
Technical Data | NSN 5961-00-153-4484
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF1.00 MILLIAMPERES MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.165 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.075 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
