NSN 5961-00-153-7302
Part Details | TRANSISTOR
5961-00-153-7302 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3738, 2N3738, 3631671, 363167-1, 3631671, 363167-1, 5961-00-153-7302, 00-153-7302, 5961001537302, 001537302
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | AUG 14, 1972 | 00-153-7302 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-153-7302
Part Number | Cage Code | Manufacturer |
---|---|---|
2N3738 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N3738 | 08225 | INDUSTRO TRANSISTOR CORP |
363167-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
363167-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-153-7302
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
INTERNAL JUNCTION CONFIGURATION | NPN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 225.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | AC250.00 MILLIAMPERES MAXIMUM AND AB500.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB133.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM |
OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |