NSN 5961-00-161-3197
Part Details | TRANSISTOR
5961-00-161-3197 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5363, 2N5363, RELEASE5780, 2N5363, 2N5363, 2N5363, 2N5363, Q0298, 5961-00-161-3197, 00-161-3197, 5961001613197, 001613197
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | NOV 03, 1971 | 00-161-3197 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-161-3197
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5363 | 89753 | ALLEGHENY INTL INCTRUE TEMPER HARDWARE DIV |
2N5363 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5780 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5363 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N5363 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
2N5363 | 12040 | NATIONAL SEMICONDUCTOR CORP |
2N5363 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
Q0298 | 06811 | SYSTRON DONNER INERTIAL, INC.DBA SYSTRON DONNER INERTIAL |
Technical Data | NSN 5961-00-161-3197
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | FIELD EFFECT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED |
POWER RATING PER CHARACTERISTIC | AB300.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.209 INCHES MAXIMUM |
OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIFICATION/STANDARD DATA | 80131-RELESE5780 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |