NSN 5961-00-163-3689

Part Details | TRANSISTOR

5961-00-163-3689 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MFE3007A, MFE3007, DMS 90112B, MFE3007, MFE121, MFE121, 121784, 121-784, 5961-00-163-3689, 00-163-3689, 5961001633689, 001633689

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 12, 197100-163-368920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-163-3689
Part Number Cage Code Manufacturer
MFE3007AC7191ADELCO ELEKTRONIK GMBH
MFE3007C7191ADELCO ELEKTRONIK GMBH
DMS 90112B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
MFE300704713FREESCALE SEMICONDUCTOR, INC.
MFE12104713FREESCALE SEMICONDUCTOR, INC.
MFE1215V1P1ON SEMICONDUCTOR CORPORATION
121-78467177ZENITH ELECTRONICS CORPORATION
Technical Data | NSN 5961-00-163-3689
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD30.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.219 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE