NSN 5961-00-164-1729
Part Details | TRANSISTOR
5961-00-164-1729 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2222, 2N2222, 8000112, 80001-12, 2N2222, 5961-00-164-1729, 00-164-1729, 5961001641729, 001641729
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 31, 1973 | 00-164-1729 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-164-1729
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2222 | 89753 | ALLEGHENY INTL INCTRUE TEMPER HARDWARE DIV |
| 2N2222 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 80001-12 | 21562 | GENERAL DYNAMICS OTS (AEROSPACE),INC. |
| 2N2222 | 16170 | TELEDYNE TECHNOLOGIES INCORPORATEDDBA TELEDYNE MICROELECTRONIC |
Technical Data | NSN 5961-00-164-1729
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC800.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
