NSN 5961-00-164-9720
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-164-9720 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C106Y21, C106Y21, 261052, 26-1052, 261052, 26-1052, 261052, 26-1052, 5961-00-164-9720, 00-164-9720, 5961001649720, 001649720
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 12, 1971 | 00-164-9720 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-164-9720
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C106Y21 | 09019 | GENERAL ELECTRIC COPOWER ELECTRONICS SYSTEMS DEPT |
| C106Y21 | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 26-1052 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 26-1052 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 26-1052 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-164-9720
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.390 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.320 INCHES MAXIMUM |
| OVERALL WIDTH | 0.185 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
