NSN 5961-00-170-9850
Part Details | TRANSISTOR
5961-00-170-9850 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5010, RELEASE5461, 2N5010, 5961-00-170-9850, 00-170-9850, 5961001709850, 001709850
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | FEB 14, 1973 | 00-170-9850 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-170-9850
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5010 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5461 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5010 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
Technical Data | NSN 5961-00-170-9850
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | AC500.00 MILLIAMPERES MAXIMUM AND AB250.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB20.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
SPECIFICATION/STANDARD DATA | 80131-RELESE5461 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |