NSN 5961-00-179-4447
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-179-4447 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1144263, 114426-3, 5961-00-179-4447, 00-179-4447, 5961001794447, 001794447
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 10, 1969 | 00-179-4447 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-179-4447
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 114426-3 | 80249 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
Technical Data | NSN 5961-00-179-4447
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | BF4.70 AMPERES MAXIMUM AND DW60.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE0.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 105.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.400 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.424 INCHES MAXIMUM |
| SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION, PNPN |
