NSN 5961-00-181-0666

Part Details | TRANSISTOR

5961-00-181-0666 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 5L.5501.001.06, 5374071, 537407-1, 05374070001, 0537407-0001, 3N201, 0488820001, 048882-0001, 5961-00-181-0666, 00-181-0666, 5961001810666, 001810666

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 09, 197100-181-066620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-181-0666
Part Number Cage Code Manufacturer
5L.5501.001.06D1901HENSOLDT SENSORS GMBHDIV SEPS
537407-196214RAYTHEON COMPANYDBA RAYTHEON
0537407-000196214RAYTHEON COMPANYDBA RAYTHEON
3N20101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
048882-000165597THALES DEFENSE & SECURITY, INC.
Technical Data | NSN 5961-00-181-0666
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD50.00 MILLIAMPERES MAXIMUM AND AK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG360.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
SPECIAL FEATURESWEAPONS SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA80131-RELESE6130 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
CRITICALITY CODE JUSTIFICATIONFEAT